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| THN5601B NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application. FEATURES o 4.8 Volt operation o P1dB 28 dBm @f=900MHz o Power gain 8.5 dB @f=900MHz PIN CONFIGURATION APPLICATIONS o Hand-held radio equipment in common emitter class-AB operation in 900 MHz communication band. PIN NO 1 2 3 4 SYMBOL E B E C DESCRIPTION emitter base emitter collector MAXIMUM RATINGS SYMBOL VCBO VCEO VEBO Ic PT TSTG TJ PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Ts = 60 ; note 1 CONDITION Open Emitter Open Base Open Collector VALUE 20 8 3 350 1 -65 ~ 150 150 Unit V V V mA W www.tachyonics.co.kr - 1/7 - Mar-22-2005 Rev 1.2 THN5601B THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITION PT=1W; Ts=60;note1 VALUE 55 Unit K/W * Note 1. Ts is temperature at the soldering point of the collector pin. QUICK REFERENCE DATA RF performance at Ts 60 in common emitter test circuit (see Fig 8.) Mode of Operation CW, class-AB f [MHz] 900 VCE [V] 4.8 PL [mW] 600 GP [dB] 7 C [%] 60 www.tachyonics.co.kr - 2/7 - Mar-22-2005 Rev 1.2 THN5601B DC CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL BVCBO BVCEO BVEBO IS hFE CCB PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance CONDITION open emitter open base open collector MIN. 20 8 3 0.1 60 MAX. UNIT V V V mA 4.5 pF 160 Hfe 140 120 100 80 60 40 20 6 Cc [pF] 5 4 3 2 0 0.00 0 0.10 0.20 0.30 0.40 Ic(A) 0.50 2 4 6 8 10 VCB [V] VCE = 4.8V ; Tj =25 f=900MHz; VCE=4.8V; ICQ=5mA; Ts < 60 Fig 1. DC Current gain v.s Collector current Fig 2. Collector-base capacitance v.s Collectorbase voltage(DC) www.tachyonics.co.kr - 3/7 - Mar-22-2005 Rev 1.2 THN5601B APPLICATION INFORMATION (I) RF performance at Ts 60 in common emitter test circuit (see Fig 7) Mode of Operation CW, class-AB 10 f [MHz] 900 VCE [V] 4.8 100 PL [mW] 600 30 26 PL [dBm] 22 18 14 10 GP [dB] 7 C [%] 70 Gp [dB] 8 C [%] 80 6 60 4 40 2 20 6 2 0 4 8 12 16 20 24 0 8 12 17 21 25 28 30 0 PL[dBm] f=900MHz; VCE=4.8V; ICQ=5mA; Ts < 60 Pin[dBm] f=900MHz; VCE=4.8V; ICQ=5mA; Ts < 60 Fig 3. Power gain and collector efficiency v.s load power (typical value) Typical Large Signal Impedance Fig 4. Load power v.s input power (typical value) VCE = 4.8V, ICQ = 5mA, Pout = 28dBm Freq.[MHz] 800 820 840 860 880 900 920 940 960 980 1000 source Mag 0.615 0.631 0.65 0.666 0.682 0.698 0.711 0.724 0.735 0.746 0.760 Ang -162.5 -164.0 -165.9 -167.6 -169.5 -171.2 -172.7 -174.5 -175.9 -177.6 -179.3 Mag 0.460 0.478 0.494 0.509 0.524 0.538 0.550 0.563 0.578 0.593 0.600 load Ang 161.4 159.6 158.0 156.2 154.0 151.9 150.0 147.3 145.0 142.8 140.3 Mar-22-2005 Rev 1.2 www.tachyonics.co.kr - 4/7 - THN5601B APPLICATION INFORMATION (II) RF performance at Ts 60 in common emitter configuration. (ICQ = 5mA) Mode of Operation CW, class-AB f [MHz] 450 VCE [V] 4.8 PL [mW] 630 GP [dB] 14 C [%] 60 DRF1401 Input/Load Impedance as a frequency Freq. [MHz] 400 450 500 550 600 rin 8.35 7.38 6.80 6.74 7.03 Zin xin -3.34 -7.19 -11.03 -14.89 -18.92 RL 23.32 20.24 18.27 17.30 17.05 ZL ZL 4.19 9.95 16.37 23.65 32.08 Transistor Impedance ZL Zin 20 Zin 15 [] 10 5 0 35 ZL 30 [] 25 20 15 rin RL -5 -10 -15 -20 350 450 xin 10 5 0 350 XL 550 650 Freq [MHz] 450 550 650 Freq [MHz] Fig 5. Input Impedance (series components) as a freq, typical values. Fig 6. Load Impedance (series components) as a freq, typical values. www.tachyonics.co.kr - 5/7 - Mar-22-2005 Rev 1.2 THN5601B Unit : mm Part List C1, C11 C2, C10 C3, C4, C8, C9 53 100nF 1nF 100pF 6pF 4pF 2.2 10 50nH C5 THN5601B C7 R1 R2, R3 L1, L2 119 Fig 7. Test Circuit Board Layout @ f = 900MHz Test board : FR4 glass epoxy board, dielectric constant = 4.5, thickness = 0.8 mm Test condition : CW test, VCC = 4.8 V, ICQ = 5 mA, frequency = 900 MHz. 90, /4 @900 MHz 90, /4 @900 MHz THN5601B Fig 8. Test Circuit Schematic Diagram @f = 900MHz www.tachyonics.co.kr - 6/7 - Mar-22-2005 Rev 1.2 THN5601B PACKAGE DIMENSION Fig 9. SOT-223 Package dimension www.tachyonics.co.kr - 7/7 - Mar-22-2005 Rev 1.2 |
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